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SUBNANOSECOND-PULSE GENERATOR WITH VARIABLE PULSEWIDTH USING AVALANCHE TRANSISTORS.REIN HM; ZAHN M.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 1; PP. 21-23; BIBL. 6 REF.Article

PROPRIETES D'AVALANCHE DE TRANSISTORS PLANARS EPITAXIAUX DE FAIBLE PUISSANCEKOPYL GF; KARPLYUK AI; MUSHCHENKO VA et al.1973; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1973; NO 11; PP. 63-66; BIBL. 3 REF.Serial Issue

DEUXIEME DISRUPTION DANS LES TRANSISTORS BIPOLAIRESPIORO Z; SWIT A.1975; ARCH. ELEKTROTECH.; POLSKA; DA. 1975; VOL. 93; NO 3; PP. 503-519; ABS. RUSSE ANGL.; BIBL. 14 REF.Article

SWITCHING PROPERTIES OF EPITAXIAL PLANAR TRANSISTORS OPERATING IN SATURATION. = PROPRIETES DE COMMUTATION DE TRANSISTORS PLANARS EPITAXIAUX FONCTIONNANT EN SATURATIONBHATTACHARYYA AB; SRIVASTAVA A; KUMAR R et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 3; PP. 277-286; BIBL. 32 REF.Article

INVESTIGATION INTO THE SURVIVAL OF EPITAXIAL BIPOLAR TRANSISTORS IN CURRENT MODE SECOND BREAKDOWN.DOW M; NUTTALL KI.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 4; PP. 100-101; BIBL. 6 REF.Article

DIFFUSIVITY AT HIGH INJECTION IN EPITAXIAL POWER TRANSISTORS.CONTI M; CORDA G.1977; SOLID. STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 7; PP. 563-566; BIBL. 23 REF.Article

MICROWAVE CHARACTERISTICS OF ION-IMPLANTED BIPOLAR TRANSISTORS = CARACTERISTIQUES HYPERFREQUENCE DE TRANSISTORS BIPOLAIRES A IMPLANTATION IONIQUEBARNOSKI MK; LOPER DD.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 441-451; H.T. 1; BIBL. 9 REF.Serial Issue

PRODUCTION D'IMPULSIONS DE "PUISSANCE" D'UNE DUREE DE L'ORDRE DE LA NANOSECONDE PAR DES TRANSISTORS A AVALANCHE A REGION DE CHARGE D'ESPACE LIMITEEL'YAKONOV VP.1972; PRIBORY. TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 3; PP. 138-141; BIBL. 4 REF.Serial Issue

INFLUENCE OF EXTERNAL RESISTOR ON SECOND BREAKDOWNS IN EPITAXIAL PLANAR TRANSITORSHANE K; MOGI M; SUZUKI T et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 2; PP. 157-158; BIBL. 4 REF.Article

AN ANALYTICAL MODEL FOR THE LOW-EMITTER-IMPURITY-CONCENTRATION TRANSISTORGRUNG BL.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 6; PP. 821-832; BIBL. 11 REF.Article

ELECTRIC MEASUREMENT OF IMPURITY CONCENTRATION IN P-TYPE EPITAXIALLY GROWN ION IMPLANTED BASE REGIONSINCECIK AZ; POTZL HW.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 12; PP. 1229-1234; BIBL. 10 REF.Article

GENERATION OF NANOSECOND HIGH-VOLTAGE PULSES WITH HIGH REPETITION RATEKOWATSCH M; LAFFERL J.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 5; PP. 196-198; BIBL. 4 REF.Article

AN INVESTIGATION OF THE VOLTAGE SUSTAINED BY EPITAXIAL BIPOLAR TRANSISTORS IN CURRENT MODE SECOND BREAKDOWNDUNN I; NUTTALL KI.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 45; NO 4; PP. 353-372; BIBL. 14 REF.Article

EFFECTS OF VARYING BASE AND COLLECTOR DOPING ON HIGH CURRENT BEHAVIOUR IN BIPOLAR EPITAXIAL TRANSISTORS.THOMAS RE; SAYEED KH.1977; INTERNATION. J. ELECTRON.; G.B.; DA. 1977; VOL. 42; NO 2; PP. 121-140; BIBL. 18 REF.Article

ELECTRICAL BEHAVIOR OF AN NPN GAA1AS/GAAS HETEROJUNCTION TRANSISTORMARTY A; REY G; BAILBE JP et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 6; PP. 549-557; BIBL. 13 REF.Article

EPITAXIAL VVMOS POWER TRANSISTORSLANE WA; SALAMA CAT.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 2; PP. 349-355; BIBL. 21 REF.Article

AN ION IMPLANTED BIPOLAR SILICON INTEGRATED CIRCUIT PROCESS.SANDERS IR.1977; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1977; VOL. 16; NO 1; PP. 75-80; BIBL. 7 REF.Article

APPLICATION OF LOW-IMPURITY CONCENTRATION (HIGH-RESISTIVITY) SI EPITAXIAL TECHNIQUE TO HIGH-VOLTAGE POWER TRANSISTORS.SUZUKI T; URA M; OGAWA T et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 8; PP. 982-984; BIBL. 4 REF.Article

TECHNOLOGIES ET APPLICATIONS DES TRANSISTORS DE PUISSANCE.1978; TOUTE ELECTRON.; FRA; DA. 1978; NO 431; PP. 27-36; BIBL. 3 REF.Article

HETEROJUNCTION AND VARIABLE COMPOSITION DEVICES AND MATERIALSsdIN: ELECTROCHEM. SOC. SPRING MEET. HOUSTON, TEX., 1972. EXTENDED ABSTR. I"; PRINCETON; ELECTROCHEM. SOC.; DA. S.D.; PP. 165-182; BIBL. DISSEM.Conference Proceedings

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